DTIC ADA422261: Shot Noise in Negative-Differential-Conductance Devices

by: Defense Technical Information Center

Publication date: 2003-10-31

Topics: DTIC Archive, Song, W, STATE UNIV OF NEW YORK AT STONY BROOK DEPT OF PHYSICS AND ASTRONOMY, *TUNNELING(ELECTRONICS), *SHOT NOISE, *TUNNEL DIODES, REPRINTS, SUPERLATTICES, VOLTAGE, SPECTRAL ENERGY DISTRIBUTION, ELECTRIC CURRENT, ACCUMULATION, INSTABILITY,

Collection: dticarchive; additional_collections

Language: English

The authors have compared the shot-noise properties at T = 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance (NDC) in their current-voltage characteristics. While the noise spectral density of the former device was greatly enhanced over the Poissonian value of 2 eI in the NDC region, that of the latter device remained 2 eI. This result implies that charge accumulation, not system instability, is responsible for shot-noise enhancement in NDC devices.