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Full text of "NASA Technical Reports Server (NTRS) 19870006978: Surface property modification of semiconductors by fluid absorption"

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ADVANCED SILICON SHEET 


N 87-16411 


SURFACE PROPERTY MODIFICATION OF 
SEMICONDUCTORS BY FLUID ABSORPTION 

UNIVERSITY OF ILLINOIS AT CHICAGO 
S. Danyluk 


:* 


Objectives 


. Lubricated Cutting (wafering) 
laboratory simulation 
mechanism 
model 



. Residual Stresses in Sheet 

Develop Interferometry Technique 
Apply to EFG and WEB 


Lubricated Cutting in Simulated Laboratory Experiments 


Load, Temperature, Fluids 


Surface Morphology 
Hardness 
Wear rate 
Depth of Damage 


Mechanism 


Model 


A 


I 

f 307 



w 



ADVANCED SILICON SHEET 


{ 

Silicon Wafer 


tracks ( propagate on 

c lavage planes) 


— r 

* 

7 T T~ 

— ? 

k damage 

. _V - zoni* 

* 

* 

i _ l S 1_ 

1 



plasticity(?) 

.due to high compressive stresses 


. at crack tips 


. Simulate Damage 


dicing (OD sawing) 
indentation (Vickers dia) 

i i 

i 

•5 

Identify critical parameters 
Load 

i 

fluid : 

temperature 



heatable stage 






ADVANCED SILICON SHEET 

OD Sawing (Dicing) 



KERF + OAMAGE 
(—2-3 TIMES 
BLADE THICKNESS) 


sioe vtw 

Diamond 




ADVANCED SILICON SHEET 


Examples of Cracks at the Bottom of Grooves 



ORIGINAL 

OF POOR QUAUTY 


310 



mmmnmmkmX ^ _ 




ADVANCED SILICON SHEET 




Summary of High-Speed, Elevated Cutting 


Deformation Mode 


Cracks at Bottom of groove 


Plasticity 


Fluids, Temperature — influence C, trface morphology 


P 



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fs* 


■V 


ADVANCED SILICON SHEET 


Indentation Model 



(space charge 
field) 


2D a X 

n 


at low P, space charge 
fields influence damage 


X « 


n 




#N S ~ finite rnaber of surface states 
•N j# E JS not known but extracted fro* expt. 
•lie, electrochemical potential 

2D • f(N 0 .N s . E JJf n 











, .<****>©/, «! ' 


ADVANCED SILICON SHEET 


Summary of Indentation Model 


2D and x exhibit maximum at 150C 
n 


N s = 10 16 -10 18 /m 2 


E s = 0.79 eV 


tv 


Doping level influences 2D 


Predict T,N^ variation with 2D 

Summary of Silicon Results 

. Wear rate 

♦ Ethanol - highest 
. air - lowest 


. Damage 


. Aoad 


plasticity. 


cracks. 


p 100«f 
p 200gf 


i 

t 

. temp 

cracks,, damage decreases 
at T 250°C 


. bulk doping 
. fluid 


316 







ADVANCED SILICON SHEET 


Conclusions 


Mechanisms of Wear 

Wear rate and damage includes: cracks and plasticity 

Laboratory simulation tests provide guidance in modifying 
industrial practices. 

Wear rate may be optimized and damage may be minimized 

Load (below 0.98N (lOOfg) 

Fluid (alcohol-based vs. water-based fluids) 

Temp (200-300°C) 

Model allows parameters to be identified and range to be 
extrapolated. 

Unresolved problems: Impact, fatigue 

Residual Stresses 

Interferometry is a promising NDT technique for sheet geometries 

Edges - compressive 
Center * tensile 

• EFG - growth " 2 C * /Bin * °RS " 4JDMP * 

WEB * v growth ' < * />in ' °RS * 11 *»• 

. Unresolved problems: anisotropy of E, v 

dendrite geometry