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NISTIR 4383

Center for Electronics and
Electrical Engineering

Technicai

Pubiication

Announcements

Covering Center Programs,
October to December 1 989,
with 1990 CEEE Events Calendar

U.S. DEPARTMENT OF COMMERCE
National Institute of Standards
and Technology
Center for Electronics and
Electrical Engineering
Semiconductor Electronics Division
Gaithersburg, MD 20899

August 1990

U^. DEPARTMENT OF COMMERCE
Robert A. Mosbacher, Secretary

NATIONAL INSTITUTE OF STANDARDS
AND TECHNOLOGY
John W. Lyons, Director

NIST

NISTIR 4383

Center for Electronics and
Electrical Engineering

Technical

Publication

Announcements

Covering Center Programs,
October to December 1989,
with 1990 CEEE Events Calendar

U.S. DEPARTMENT OF COMMERCE
National Institute of Standards
and Technology
Center for Electronics and
Electrical Engineering
Semiconductor Electronics Division
Gaithersburg, MD 20899

August 1990

U.S. DEPARTMENT OF COMMERCE
Robert A. Mosbacher, Secretary

NATIONAL INSTITUTE OF STANDARDS
AND TECHNOLOGY
John W. Lyons, Director

INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

This is the twenty- third issue of a quarterly publication providing information on
the technical work of the National Institute of Standards and Technology (formerly the
National Bureau of Standards) Center for Electronics and Electrical Engineering. This
issue of the CEEE Technical Publication Announcements covers the fourth quarter of
calendar year 1989.

Organization of Bulletin : This issue contains citations and abstracts for Center
publications published in the quarter. Entries are arranged by technical topic as
identified in the table of contents and alphabetically by first author within each
topic. Following each abstract is the name and telephone number of the individual to
contact for more information on the topic (usually the first author) . This issue also
includes a calendar of Center conferences and workshops planned for calendar year 1990
and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national
reference standards, measurement methods, supporting theory and data, and traceabil-
ity to national standards.

The metrological products of these programs aid economic growth by promoting equity
and efficiency in the marketplace, by removing metrological barriers to improved
productivity and innovation, by increasing U.S. competitiveness in international
markets through facilitation of compliance with international agreements, and by
providing technical bases for the development of voluntary standards for domestic and
international trade. These metrological products also aid in the development of
rational regulatory policy and promote efficient functioning of technical programs of
the Government.

The work of the Center is divided into two major programs: the Semiconductor Tech-
nology Program, carried out by the Semiconductor Electronics Division in Gaithers-
burg, MD, and the Signals and Systems Metrology Program carried out by the
Electricity Division in Gaithersburg and the Electromagnetic Fields and
Electromagnetic Technology Divisions in Boulder, CO. Key contacts in the Center are
given on the back cover; readers are encouraged to contact any of these individuals
for further information.

Center sponsors : The Center Programs are sponsored by the National Institute of Stan-
dards and Technology and a number of other organizations, in both the Federal and
private sectors; these are identified on page 27.

Note on Publication Lists : Guides to earlier as well as recent work are the publica-
tion lists covering the work of each division. These lists are revised and reissued
on an approximately annual basis and are available from the originating division. The
current set is identified in the Additional Information section, page 20.

CEEE Technical Publication Announcements - August 1990

Page 1

TABLE OF CONTENTS

INTRODUCTION inside title page

SEMICONDUCTOR TECHNOLOGY PROGRAM 2

Silicon Materials 2

Dimensional Metrology 2

Photodetectors 2

Device Physics and Modeling 3

Packaging 4

Other Semiconductor Topics (cont'd.)

optical transitions between magneto-
donor states in InSb , both with and
without optic phonon assistance. The
phonon-assisted transitions provide a
unique opportunity to investigate high
excited states of the magneto -Coulomb
system, which imitates the hydrogen atom
in gigantic magnetic fields. High
resolution data also reveal the presence
of excited state magneto-donor transi-
tions unknown until present.

[Contact: David G. Seiler, (301) 975-

2074]

SIGNALS & SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, AND
TRANSMISSION

DC & Low Frequency Metrology

Hamilton, C.A. , Lloyd, F.L. , Chieh, K. ,
and Goeke , W.C., A 10-V Josephson

Voltage Standard, IEEE Transactions on
Instrumentation and Measurement, Vol.
38, No. 2, pp. 314-316 (April 1989).

This paper describes the design and
operation of an 18992 Josephson- junction
array which can generate reference
voltages up to 12 V. This device has
applications for the direct calibration
of Zener reference standards, calib-
rators, and digital voltmeters at the
10-V level, and for very accurate
linearity and ratio measurements.
[Contact: Clark A. Hamilton, (303) 497-
3740/3988]

Fundamental Electrical Measurements

Cage, M.E., Seni classical Scattering
Corrections to the Quantum Hall Effect
Conductivity and Resistivity Tensors,
Journal Phys . : Condens . Matter, Vol. 1,
No. 32, pp. 5531-5534 (1989).

Ando, Matsumoto, and Uemura published an
important paper in 1975 that greatly
influenced the early experimental work
on the quantum Hall effect. Their paper
showed that, in both a semiclassical

scattering model and in a self-consis-
tent Born approximation, there is a
correction to the quantum Hall conduc-
tivity component of the conductivity

tensor that is directly proportional to
the diagonal conductivity component
We provide a detailed derivation of
their results using the semiclassical
scattering (relaxation- time approxima-
tion) model. We then present the
surprising result that, in the semiclas-
sical scattering model, there is no
correction to the quantum Hall resis-
tivity tensor component due to a

finite value of p^^ .

[Contact: Marvin E. Cage, (301) 975-

4248]

Crvoelectronic Metrology

Hamilton, C.A. , Lloyd, F.L. , Chieh, K. ,
and Goeke, W.C. , A 10-V Josephson
Voltage Standard, IEEE Transactions on
Instrumentation and Measurement, Vol.
38, No. 2, pp. 314-316 (April 1989).

This paper describes the design and
operation of an 18992 Josephson- junction
array which can generate reference
voltages up to 12 V. This device has
applications for the direct calibration
of Zener reference standards, cali-
brators, and digital voltmeters at the
10-V level, and for very accurate
linearity and ratio measurements.
[Contact: Clark A. Hamilton, (303) 497-
3740/3988]

Hamilton, C.A. , McDonald, D.G. ,
Sauvageau, J.E., and Whiteley, S.,
Standards and High Speed Instrumenta-
tion, Proceedings of the IEEE, Vol. 77,
No. 8, pp. 1224-1232 (August 1989).

This paper reviews four applications of
superconductivity which are of current
interest in the field of metrology.
These applications are Josephson series-
array voltage standards, cryogenic
current comparators , a superconducting
sampling oscilloscope, and a new
bolometer based on a kinetic inductance
thermometer .

CEEE Technical Publication Announcements - August 1990

Pape 7

Crvoelectronic Metrology (cont'd.)

[Contact: Clark A. Hamilton, (303) 497-
3740]

Antenna Metrology

Francis, M.H. , Antenna Far-Field Pattern
Accviracies at Millimeter Wave Frequen-
cies Using the Planar Near-Field
Technique, Proceedings of the Eleventh
Annual Meeting and Symposium of the
Antenna Measurement Techniques Associa-
tion, Monterey, California, October 9-
13, 1989, pp. 11-16 to 11-21.

In recent years there has been an
increasing demand for antenna calibra-
tions at millimeter-wave frequencies.
Because of this, the National Institute
of Standards and Technology (NIST) has
been developing measurement capabilities
at millimeter-wave frequencies. The
development of gain and polarization
measurement capabilities has been
previously reported. This paper reports
on the development of the capability to
measure an antenna pattern which has
been achieved during the last year.
Measurement accuracies of better than
4 dB have been achieved for sidelobes
which are 40 dB below the mainbeam peak.
NIST is now providing a new measurement
service for antenna patterns in the 30-
to 50-GHz frequency range.

[Contact: Michael H. Francis, (303)

497-5873]

Guerrieri, J.R., and Kremer, D.P.,
Automated Multi-Axis Motor Controller
and Data Acquisition System for Near-
Field Scanners, Proceedings of the
Eleventh Annual Meeting and S)rmposium
of the Antenna Measurement Techniques
Association, Monterey, California,
October 9-13, 1989, pp. 12-24 to 12-28.

The National Institute of Standards and
Technology (NIST) has developed a multi-
axis controller and software data
acquisition system that has improved
probe position accuracies in near- field
scanning. This extends the usefulness
of the NIST planar near-field scanner to

higher frequencies. This system

integrates programmable power supplies
into an existing planar measurement
system with new software that controls
the power supplies and the data
acquisition. It provides the higher
positioning accuracy required for
millimeter-wave measurements at a
reasonable cost.

This system uses the NIST planar near-
field scanner's existing dc motors,
computer, and laser. The programmable
power supplies are connected to the
motors, with a separate power supply for
each motor's armature and a common power
supply for each of the motor's field
windings. This allows for concurrent
movement in each axis and eliminates
delays in switching between axes.
Directional control, motor protection,
and special software features are
implemented by logic control.

[Contact: Jeffrey R. Guerrieri, (303)

497-3863]

Muth, L.A. , and Lewis, R.L. , Iterative
Technique to Correct Probe Position
Errors in Planar Near-Field to Far-
Field Transformations, Proceedings of
the 1989 International Symposium on
Antennas and Propagation, Tokyo, Japan,
August 22-25, 1989, Vol. 4, pp. 901-

904. [Also published as NIST

Technical Note 1323 (October 1988)].

We have developed a general theoretical
procedure to take into account probe
position errors when planar near-field
data are transformed to the far field.
If the probe position errors are known,
we can represent the measured data as a
Taylor series , whose terms contain the
error function and the ideal spectrum of
the antenna. Then we can solve for the
ideal spectrum in terms of the measured
data and the measured position errors by
inverting the Taylor series . This is
complicated by the fact that the
derivatives of the ideal data are
unknown; that is, they can only be
approximated by the derivatives of the
measured data. This introduces

additional computational errors, which

Pape 8

Antenna Metrology (cont'd.)

CEEE Technical Publication Announcements - Aupust 1990

must be properly taken into account. We
have shown that the first few terms of
the inversion can be easily obtained by
simple approximation techniques, where
the order of the approximation is easily
specified. A more general solution can
also be written by formulating the
problem as an integral equation and
using the method of successive approxi-
mations to obtain a general solution.
An important criterion that emerges from
the condition of convergence of the
solution to the integral equation is
that the total averaged position error
must be less than some fraction of the
sampling criterion for the antenna under
test .

[Contact: Lorant A. Muth, (303) 497-

3703]

Muth, L.A. , and Lewis, R.L. , Planar
Near-Field Codes for Personal Com-
puters, NISTIR 89-3929 (October 1989).

We have developed planar near- field
codes, written in FORTRAN, to serve as a
research tool in antenna metrology. We
describe some of the inner workings of
the codes , the data management schemes ,
and the structure of the input/output
sections to enable scientists and
programmers to use these codes effec-
tively. The structure of the codes is
seen to be open, so that a user should
be able to incorporate a new application
into the package for future use with
relative ease. The large number of
subroutines currently in existence are
briefly described, and a table showing
the interdependence among these
subroutines is constructed. Some basic
research problems, such as transforma-
tion of a near-field to the far-field
and probe position error correction, are
carried out from start to finish, to
illustrate use and effectiveness of
these codes. Sample outputs are shown.
The advantage of a high degree of
modularization is demonstrated by the
use of disk-operating-system (DOS) batch
files to execute FORTRAN modules in a
desired sequence.

[Contact: Lorant A. Muth, (303) 497-

3603]

Newell, A.C. , Guerrieri, J.R., Per-
singer, R.R. , Stiles, J.A., and
McFarlane, E.J., Comparison of Antenna
Boresight Measurements Between Near-
Field and Far-Field Ranges, Proceed-
ings of the Eleventh Annual Meeting and
Symposium of the Antenna Measurement
Techniques Association, Monterey,
California, October 9-13, 1989, pp. 1-
24 to 1-29.

This paper describes the results of
electrical boresight measurement
comparisons between one far-field and
two near-field ranges. Details are
given about the near-field alignment
procedures and the near- field error
analysis. Details of the far-field
measurements and its associated errors
are not described here, since the near-
field technique is of primary interest.
The coordinate systems of the antenna
under test and the measurement ranges
were carefully defined, and extreme care
was taken in the angular alignment of
each. The electrical boresight

direction of the main beam was deter-
mined at a number of frequencies for two
antenna ports with orthogonal polariza-
tions. Results demonstrated a maximum
uncertainty between the different ranges
of 0.018 degrees. An analytical error
analysis that predicted a similar level
of uncertainty was also performed. This
error analysis can serve as the basis
for estimating uncertainty in other
near- field measurements of antenna

boresight.

[Contact: Allen C. Newell, (303) 497-

3743]

Newell, A.C. , Kremer, D.P., and

Guerrieri, J.R., Improvements in
Polarization Measurements of Circularly
Polarized Antennas, Proceedings of the
Eleventh Annual Meeting and Symposium

of the Antenna Measurement Techniques
Association, Monterey, California,

October 9-13, 1989, pp. 1-30 to 1-36.

A new measurement technique that is used

CEEE Technical Publication Announcements - August 1990

Pape 9

Antenna Metrology ( cont ' d . )

to measure the polarization properties
of dual-port, circularly polarized
antennas is described. A three -antenna
technique is used, and high- accuracy
results are obtained for all three
antennas without assuming ideal or
identical properties. This technique
eliminates the need for a rotating
linear antenna, reduces the setup time
when gain measurements are also
performed, and reduces error for
antennas with low axial ratios.

[Contact: Allen C. Newell, (303) 497-

3743]

Microwave & Millimeter-Wave Metrology

Adair, R.T., and Livingston, E.M. ,
Coaxial Intrinsic Impedance Standards,
NIST Technical Note 1333 (October
1989) .

This paper discusses how impedance
standards are derived from the basic
definition of impedance, constructed,
and used in metrology with coaxial air-
line systems. Basic transmission line
equations are reviewed with emphasis
given to intrinsic or derived standards
for obtaining the impedance in low- loss
transmission line systems. A brief
description is given of how impedance
standards are used to calibrate the
vector automatic network analyzer, and
specifically, the six-port system
automatic network analyzer used at the
National Institute of Standards and
Technology (NIST) for calibration
services in the radio -frequency,
microwave, and millimeter-wave areas.
Measurement uncertainties are given for
7 -mm coaxial devices measured with the
NIST six-port system. The resolution of
this six-port system is several orders
more precise than that of the present
impedance standards from which it is
calibrated. Required improvements in
the physical dimensions of air- line
standards which permit the capability of
the automatic network analyzer to be
more fully utilized are given.

[Contact: John R. Juroshek, (303) 497-

5362]

Hoer, C.A. , Systematic Errors in Power
Measurements Made With a Dual Six-Port
ANA, NIST Technical Note 1332 (July
1989) .

The purpose of this report is to
determine the systematic error in
measuring power with a dual six-port
automatic network analyzer (ANA) . Most
of the report concentrates on developing
equations for estimating systematic
errors due to imperfections in the test
port connector, imperfections in the
connector on the power standard, and
imperfections in the impedance standards
used to calibrate the six-port for
measuring reflection coefficient. These
are the largest sources of error
associated with the six-port. For 7-mm
connectors, all systematic errors which
are associated with the six-port add up
to a worst-case uncertainty of ±0.00084
in measuring the ratio of the effective
efficiency of a bolometric power sensor
relative to that of a standard power
sensor.

[Contact: David H. Russell, (303) 497-

3148]

Optical Fiber Metroloev

Danielson, B.L. , and Whittenberg, C.D.,
Group Index and Time Delay Measurements
of a Standard Reference Fiber, NISTIR
88-3091 (July 1988).

We describe measurement techniques for
establishing a standard reference fiber
with a well-characterized group index
and time or group delay. Evaluation of
an interferometric method indicates that
fiber group index can be determined
with a total estimated uncertainty of
about 0.03% in small samples. Group
delay of the reference fiber was
measured with an overall uncertainty
less than 0.004% in a 7 -km waveguide.
We discuss the application of a standard
reference fiber to calibration of the
distance measurement accuracy of an

Page 10

CEEE Technical Publication Announcements - August 1990

Optical Fiber Metrology (cont'd.)

optical time-domain ref lactometer .
[Contact: Bruce L. Danielson, (303)

497-5620]

Electro-Optic Metrology

Deeter, M.N. , Rose, A.H. , and Day, G,W. ,
Characteristics of Polarimetric

Magnetic Field Sensors Based on Yttrium
Iron Garnet, Conference Digest of the
1989 LEOS (IEEE Lasers and Electro-
Optics Society) Meeting, Orlando,

Florida, October 17-20, 1989, Vol.

M7.3, p. 110.

We describe the performance character-
istics of polarimetric Faraday-effect
magnetic field sensors employing

ferrimagnetic-sensing elements, such as
yttrium iron garnet (YIG) , Experimental
results of sensor sensitivity, lin-
earity, and directionality are presented
for three cylindrical YIG samples, each
having a different length- to -width
ratio .

[Contact: Merritt N. Deeter, (303) 497-
5400]

Gallawa, R.L. , and Tu, Y. , Analysis of
Circular Bends in Planar Optical
Waveguides, Fiber and Integrated
Optics, Vol. 8, pp. 87-97 (November 21,
1988) .

Waveguides with circular bends are
analyzed by means of a conformal
transformation in conjunction with the
WKB method of dealing with the non-
uniform refractive index that results
from the transformation. The result is
a prediction of the operational
parameters of the bent guide, including
the loss. The transformation makes
possible an intuitive understanding of
the cause of the loss.

[Contact: Robert L. Gallawa, (303) 497-
3761]

Lee, K.S., New Compensation Method for
Bulk Optical Sensors with Multiple
Birefringences, Applied Optics, Vol.

28, No. 11, pp. 2001-2011 (1 June

1989) .

The dielectric tensor of an anisotropic
crystal with multiple perturbations is
presented to include the effects of
multiple perturbations. To study

electromagnetic wave propagation in
anisotropic crystals subject to various
influences, the perturbed dielectric
tensor is substituted into Maxwell's
equation. Then, a 2 x 2 transmission
matrix formalism, based on a normal-mode
approach, is extended to anisotropic
crystals possessing multiple birefrin-
gences to develop compensation schemes
for ac optical sensors employing the
crystal. It is shown that a new
compensation method utilizing two
analyzers can eliminate the effects of
both unwanted linear birefringences and
unwanted circular birefringences on the
stability of the ac bulk polarimetric
optical sensor. The conditions (here
referred to as the quenching conditions)
in which the compensation method becomes
important are also derived for both
voltage (or electric field) and current
(or magnetic field) sensors.

[Contact; G. W. Day, (303) 497-5204]

Rasmussen, A.L. , Simpson, P.A., and
Sanders, A.A. , Improved Low-Level
Silicon- Avalanche-Photodiode Transfer
Standards at 1.064 Micrometers, NISTIR
89-3917 (August 1989).

Three silicon- avalanche -photodiode

transfer standards (APD TS) were
calibrated from «10'® to ~10”^ W/cm^
peak power density at approximately 10%
uncertainty. Calibrations were

performed for 1.064-/im wavelength
pulses, having 10- to 100-ns durations.
For this calibration, an acousto-
optically modulated laser beam provided
alternately equal levels of pulsed power
and cw power into a low-level beam
splitter. The cw power measured by a
transfer standard in the transmitted
beam of the splitter was used to
determine the pulsed power into the APD
transfer standard in one of the low-
level reflected beams of the splitter.

CEEE Technical Publication Announcements - August 1990

Paee 11

Electro-Optic Metrology (cont'd.)

(September 1989) .

The APD detector had about 1-cm^
aperture and a 3.8-cm focal length lens
in front of it. Lens, window, and
detector surfaces had narrow-band anti-
reflection coatings. The commercial
detector package is a temperature -
compensated, infrared- enhanced APD
preamplifier module. To increase the
sensitivity, one or two 20-dB, 500-MHz
band-width amplifiers followed the
preamplifier. At very low pulsed power
levels, a 30-MHz low-pass filter with
gaussian roll-off was attached to the
amplifier output to reduce the noise. A
transient digitizer recorded the impulse
responses of the APD detectors at 1.064
fim. These data were read into computer
programs that convolved the unity area
impulse response with unity height
gaussian pulses. From these data,
correction factors of the pulse peak for
observed pulse durations from 10 to 100
ns were determined. Instructions,
calibrations, error budgets, and system
descriptions are included.

[Contact: Alvin L. Rasmussen, (303)
497-5367]

Schlager, J.B., Yamabayashi, Y. , and
Franzen, D.L. , Soliton-Like Compression
of Pulses from Erbium-Fiber Lasers,
Proceedings of the European Conference
on Optical Communications, Gotenburg,
Sweden, September 10-14, 1989, Vol. 3,
pp. 62-65.

Erbium- fiber lasers with cavity lengths
of 5 to 5000 m are mode -locked at the
fundamental cavity frequency. Pulse
durations vary from 13 to 80 ps; the
shorter pulses exhibit soliton-like
compression and higher order effects
when propagated through external fibers.
[Contact: John B. Schlager, (303) 497-
3542]

Schlager, J.B., Yamabayashi, Y. ,
Franzen, D. , and Juneau, R.I., Mode-
Locked, Long-Cavity, Erbium Fiber
Lasers with Subsequent Soliton-Like
Compression, IEEE Photonics Technology
Letters, Vol. 1, No. 9, pp. 264-266

Erbium fiber lasers with cavity lengths
of 20 to 5000 m are mode- locked at the
fundamental cavity frequency using an
integrated-optic intensity modulator
driven by a novel pulse generator.
Resulting optical pulses at 1536 nm are
recorded with a synchroscan streak
camera and have durations of 18 to 80 ps
with peak powers over 6 W. The shorter
cavities yield nearly transform- limited
pulses which are narrowed by soliton-
like compression to approximately 5 ps
after propagation through an external
14-km fiber.

[Contact: John B. Schlager, (303) 497-

3542]

Electromagnetic Properties

Kremer, D.P., Newell, A.C. , and Agee,
D.A. , Absorber Characterization,
Proceedings of the Eleventh Annual
Meeting and S)nnposium of the Antenna
Measurement Techniques Association,
Monterey, California, October 9-13,
1989, pp. 13-7 to 13-11.

When a laboratory considers replacing an
old microwave absorber or a new
installation, it needs a method that
makes possible quick, inexpensive, and
accurate measurements on individual
absorber samples. Different types and
sizes of absorber need to be quickly
analyzed at multiple frequencies to
determine which t 3 rpe best maintains or
improves the facility's radio -frequency
characteristics . In response to this
need, the National Institute of
Standards and Technology has devised an
improved version of the Doppler-shift
method to measure the scattering levels
of different sizes and types of
microwave absorber. This technique is
useful as an inexpensive and simple
method for measuring individual absorber
pieces with good accuracy and sen-
sitivity. The system described does
not require a large anechoic facility or
a sophisticated measurement system for
minimizing the effects of background
scattering. Using this method.

CEEE Technical Publication Announcements - August 1990

Pape 12

Electromapnetic Properties (cont'd.)

reflectivity levels on the order of -80
dB can be measured and relative changes
of 1 dB can be detected. Sample results
for an absorber with and without fire
retardant salts and different sizes are
presented.

[Contact: Douglas P. Kremer, (303) 497-
3732]

Complex Testing

Stenbakken, G.N., Souders , T.M. , and
Stewart, G.W. , Ambiguity Groups and
Testability, IEEE Transactions on
Instrumentation and Measurement, Vol.
38, No. 5, pp. 941-947 (October 1989).

An efficient method has been developed
for determining component ambiguity
groups which arise in analog circuit
testing. The method makes use of the
sensitivity model of the circuit. The
ambiguity groupings are shown to depend
on the test points selected and the
measurement accuracy, and is, therefore,
a useful tool for determining where to
add or delete test points. The concept
of ambiguity groups can be used to
refine the testability measure of a
circuit .

[Contact: Gerard N. Stenbakken, (301)

975-2440]

Other Fast Signal Topics (cont'd.)

head motions. The angular head motions
of boxers is thought to be similar to
those in automobile crashes. The

transducer parameters tested include
axial and transverse linear-vibration
sensitivities, equivalent acceleration
noise, effects of power supply voltage
variations, and mouthpiece vibration
transmissibility . Special test

apparatus described includes a dual
centrifuge and a dual spin- axis rate-
table. Test philosophy and some test
results are used to illustrate how
apparently conflicting test results can
be used to explain transducer perfor-
mance under test conditions of combined
environments .

[Contact: John D. Ramboz , (301) 975-

2434]

Schoenwetter , H.K. , Leedy, T.F. , and
Laug , 0 . B . , Electrical Performance

Tests for Storage Oscilloscopes, NISTIR
89-4220 (December 1989).

Electrical performance test procedures
for a dc to 100-MHz storage oscilloscope
were developed for the purpose of
evaluating samples submitted by
electronic instrument manufacturers in
response to specifications issued by the
U.S. Army Communications -Electronics
Command. The detailed, step-by-step
test procedures are based on the
specifications supplied by the Army and
include sample data sheets and tables
for the recording of interim data and
final test results.

This report discusses the measurement
principles and techniques underlying the
most significant procedures. In

addition, the sources of measurement
uncertainty are discussed.

[Contact: Owen B. Laug, (301) 975-2412]

ELECTRICAL SYSTEMS

Power Systems Metrology

Martzloff , F.D. , and Leedy, T.F. , A
Glimpse at Long-Term Effects of

Momentary Overvoltages on Zinc Oxide
Varistors, Ceramic Transactions, Vol.
3, pp . 306-311 (1989), Proceedings of

the Second International Varistor
Conference, Schenectady, New York,
December 4-5, 1988.

Because the prime function of varistors
is diversion of high-energy surges,
most of the attention is directed toward
selecting the appropriate device rating
to ensure long life under surge
conditions. Some attention is also
given to matching steady- state rating of
the device to the power system voltage.
However, during abnormal (and not well-
defined) power system conditions, the
line voltage can reach values that will
cause substantial current in the
varistor. Until the effects of these
momentary overvoltages are better
identified and understood, there will be
a risk of near-term failure at worst and
accelerated aging at best.

[Contact: Francois D. Martzloff, (301)

975-2409]

Misakian, M. , and McKnight, R.H. , DC
Electric Field Effects During Measure-
ments of Monopolar Charge Density and
Net Space Charge Density Near HVDC
Power Lines, IEEE Transactions on Power
Delivery, Vol. 4, No. 4, pp. 2229-2234
(October 1989) .

The influence of a dc electric field on
the measurement of monopolar charge
densities using an aspirator- type ion
counter and the measurement of net space
charge density using a Faraday cage or
filter is examined. Optimum configura-
tions which minimize the effect of the
electric field are identified for each
type of instrumentation.

[Contact: Martin Misakian, (301) 975-

2426]

Pace, M.O. , Wintenberg, A.L. , Blalock,
T.V., Kelley, E.F. , FitzPatrick, G.J.,
Fenimore, C. , and Yamashita, H. ,
Pressiire Effects on Partial Discharges
in Hexane Under DC Voltage, 1989 Annual
Report, Conference on Electrical
Insulation and Dielectric Phenomena,

Page 14

CEEE Technical Publication Announcements - August 1990

Power Systems Metrology (cont'd.)

Leesburg, Virginia, October 29-November
1, 1989, pp. 87-92 (1989).

The pressure dependencies of the early
partial discharges (PD) have been
experimentally investigated at a needle
in hexane from subatmospheric pressure
(near hexane vapor pressure) to several
atmospheres . Each PD is photographed in
synchronism with a characteristic
pattern of current pulses. An image-
preserving optical delay allows
photography to commence just before or
at inception. Individual current pulses
comprising a characteristic pattern are
resolved.

[Contact: Gerald J. FitzPatrick, (301)

975-2737]

Petersons, 0., Review of book entitled,
"The Current Comparator," by W.J.M. ,
Moore and P.N. Miljanic, Metrologia
(Journal published in France by the
Bureau International des Poids et
Mesures) , Vol. 26, No. 1, pp. 77-78
(March 1989) .

This review covers the book, "The
Current Comparator," by W. J. M. Moore
and P. N. Miljanic. The review includes
an overall assessment of the coverage of
the subject, and addresses the clarity
and effectiveness of the authors in
reaching their intended audience. The
book is a concise, yet comprehensive
monograph covering the basic principles,
construction, details, error sources,
and error reduction techniques for
magnetic current comparators. Alter-
nating- (power frequency) and direct-
current comparators are covered.
Numerous applications and instruments
utilizing current comparators are
described. The book serves both as
tutorial material for the uninitiated
and as a reference volume for the
expert .

[Contact: Oskars Petersons, (301) 975-

2A00]

Van Brunt, R.J., Research for Electric
Energy Systems - An Annxial Report,

NISTIR 89-4167 (October 1989).

This is a report of technical progress
in four investigations conducted at the
National Institute of Standards and
Technology and supported by the U.S.
Department of Energy under Task Order
Number 137. The first investigation is
concerned with the measurements of
electric fields and ions in the vicinity
of high-voltage transmission lines and
biological exposure facilities. For
this investigation, results are reported
on evaluations of two methods for
measuring ion mobilities at atmospheric
pressure and an aspiratory- type ion
counter for measuring monopolar charge
densities in air. The second investi-
gation is concerned with development of
advanced diagnostics for compressed gas-
insulated power systems. For this
investigation, results are reported on
measurements of collisional electron
detachment and negative ion conversion
reactions in SFg and on a new technique
for measuring the stochastic behavior of
partial discharges. The third inves-
tigation is concerned with measurement
of prebreakdown phenomena at solid-
liquid dielectric interfaces. Results
are presented here from optical
observations of the influence of
hydrostatic pressure on prebreakdown
partial discharge development and
measurement of nanosecond impulse
breakdown at liquid-solid interfaces.
The fourth area of research is concerned
with electrical measurement of fast
transient phenomena. Results are

presented from an investigation into the
interactions between two dividers used
simultaneously to measure fast impulse
voltages .

[Contact: Richard J. Van Brunt, (301)

975-2425]

Van Brunt , R . J . , and Kulkarni , S . V . ,
Method for Measuring the Stochastic
Properties of Corona and Partial-
Discharge Pulses, Review of Scientific
Instruments, Vol. 60, No. 9, pp. 3012-
3023 (September 1989),

A new method is described for measuring

CEEE Technical Publication Announcements - August 1990

Page 15

Power Systems Metrology (cont'd.)

the stochastic behavior of corona and
partial-discharge pulses which utilizes
a pulse selection and sorting circuit
in conjunction with a computer-con-
trolled multichannel analyzer to
directly measure various conditional and
unconditional pulse-height and pulse-
time-separation distributions. From
these measured distributions it is
possible to determine the degree of
correlation between successive discharge
pulses. Examples are given of results
obtained from measurements on negative,
point- to-plane (Trichel- type) corona
pulses in an N 2 /O 2 gas mixture which
clearly demonstrate that the phenomenon
is inherently stochastic in the sense
that development of a discharge pulse is
significantly affected by the amplitude
of and time separation from the
preceding pulse. It is found, for
example, that corona discharge pulse
amplitude and time separation from an
earlier pulse are not independent random
variables. Discussions are given about
the limitations of the method, sources
of error, and data analysis procedures
required to determine self-consistency
of the various measured distributions .
[Contact: Richard J. Van Brunt, (301)

975-2425]

Superconductors

Ekin, J.W., VAMAS Inter laboratory
Comparisons of Critical Current vs .
Strain in Nb 3 Sn [Original title: VAMAS
Round Robin Results of Critical Current
vs. Strain in NbgSn], Proceedings of
the Sixth Japan/United States Workshop
on High Field Superconductors, Boulder,
Colorado, February 22-24, 1989, pp. 94-
98.

A comparison is made of measurements of
the effect of axial tensile strain on
the critical current of multifila-
mentary NbgSn superconductors by three
different laboratories. Two of the
laboratories used short- sample testing
apparatus wherein a straight section of
conductor was cooled in a force-free

state. One of the laboratories utilized
a spring apparatus wherein a long sample
was reacted in a coil shape and attached
to a spring sample holder. The

agreement between the results for the
two laboratories utilizing the straight-
sample apparatus was quite good, within
15% for all three conductors at 15 T,
except at very high strain for one
conductor which had an upper critical
field close to the measurement field.
To make a comparison with the data
obtained using the spring method, it was
necessary to fit the data to the
compressive prestrain determined using
the straight- sample technique. Making
such a fit, the agreement was found to
be variable, between 15 and 25%

depending on the conductor. Values of
the prestrain and irreversible strain
obtained from the straight -sample data
agreed within 0.06% and 0.05%, respec-
tively. Values of the maximum (strain-
free) upper critical fields agreed
within several tenths of a tesla.
[Contact: Jack W. Ekin, (303) 497-

5448]

Ekin, J.W., Bray, S.L. , Danielson, P. ,
Smathers, D. , Sabatini, R.L. , and
Suenaga, M. , Transverse Stnress Effect
on the Critical Current of Internal Tin
and Bronze Process Nb 3 Sn Supercon-
ductors, Proceedings of the Sixth

Japan/United States Workshop on High
Field Superconductors, Boulder,

Colorado, February 22-24, 1989, pp. 50-
52.

The effect of transverse stress on the
critical current density, , has been
shown to be significant in bronze -
process Nb 3 Sn, with the onset of
significant degradation at about 50 MPa.
In an applied field of 10 T, the
magnitude of the effect is about seven
times larger for transverse stress than
for axial tensile stress. We have also
measured the effect in an internal tin
conductor with excess tin, which yields
a more equiaxed Nb 3 Sn grain morphology
than for bronze-process Nb 3 Sn, in which
the grains tend to be more columnar.
The effect of transverse stress on J,.

Pape 16

Superconductors (cont'd.)

CEEE Technical Publication Announcements - August 1990

was nearly identical for the two
conductors, indicating that the
transverse stress effect is probably not
dependent on grain morphology.

[ Contact :
5448]

Jack W.

Ekin,

(303)

497-

Ekin, J.W.

, Goodrich,

L.F. ,

Bray,

S.L. ,

Bergren,

N . F . , and

Goldfarb ,

R.B. ,

Electromechanical Properties of
Superconductors for High-Energy Physics
Applications, Part II, NISTIR 89-3912
(November 1989) .

This report presents data on supercon-
ductor performance under mechanical
load. The data are needed for setting
mechanical design constraints and
measuring the electro-mechanical
performance of NbTi superconductors for
DOE high-energy physics magnet applica-
tions. The effect of axial tensile
stress, applied at room temperature, on
the critical current of NbTi supercon-
ductor strands has been measured. The
data show a simple result that the
effect on the critical current is
independent of the temperature at which
the stress is applied; this allows the
existing 4 K database to be used to
determine critical current degradation
from room temperature fabrication
stress, from cool-down stress introduced
by differential contraction, and from 4
K stress generated by the Lorentz force
when the magnet is energized. A study
of the critical-current variations along
NbTi strands extracted from a Rutherford
cable has been made also. The results
show that the principal mechanical
degradation is extremely localized at
the regions where the NbTi strand is
bent around the edge of the cable. For
example, only 3% of the total strand
length can contribute 92% of the total
strand voltage. A further study has
been made of the effects of bending
strain on the critical current of NbTi
conductors . The degradation of the
critical current from bending strain is
much greater at low values of electric
field than at high, suggesting that

irregularity of the filament cross-
sectional area introduced by bending may
be the source of the I^, degradation.
The bend tolerance of a NbTi conductor
can be enhanced by increasing the local
copper- to-super conductor area ratio.
Measurements of the permeability,
saturation magnetization, and intrinsic
coercivity of several high-permeability
steel alloys were made. The overall
differences of saturation magnetization
and intrinsic coercivity between cold-
rolled steel samples were not sig-
nificant .

[Contact: Jack W. Ekin, (303) 497-

5448]

Ekin, J.W., and Larson, T.M. , Magnetic-
Field Angle Dependence of the Critical
Current in Y- , Bi- , and Tl-Based High-
TC Superconductors, Proceedings of the
Sixth Japan/United States Workshop on
High Field Superconductors, Boulder,
Colorado, February 22-24, 1989, pp. 61-
63.

The change in J^, with angle between
applied field and current depends on the
magnetic field regime. There is

essentially no change at low fields,
where is not determined by pinning

but rather by self-field effects. At
intermediate fields in the plateau
regime, the effect t 3 rpically amounts to
a 50 to 300% enhancement in J^. for the
force-free case, comparable in magnitude
to conventional superconductors,

indicating a nearly isotropic well-
connected network of percolation paths.
At high fields, field angle effect
becomes negligible, indicating that the
percolation paths in the high- field
regime become more disconnected and
highly convoluted with some section of
each percolation path perpendicular to
the applied field independent of the
angle .

[Contact: Jack W. Ekin, (303) 497-

5448]

Ekin, J.W., Larson, T.M. , Hermann, A.M. ,
Sheng, Z.Z., Togano, K. , and Kumakura,
H., Double-Step Critical Cuirreiit vs.
Field Characteristic in Y- , Bi- , and

CEEE Technical Publication Announcements - August 1990

Pape 17

Superconductors (cont'd.)

Tl-Based Bulk High-T^ Superconductors,
Physica C, Vol. 160, pp . 489-496

(1989) .

A double-step characteristic is observed
at 76 K in the plot of transport
critical current as a function of
magnetic field in bulk sintered Y- , Bi-,
and T1 -based high-T^ superconducting
materials. The low field step- like drop
in the critical current commences at
magnetic fields between about 0.3 and 2
mT. This is followed by a plateau
region of relatively constant critical
current extending from about 30 to 300
mT, and then a second drop at fields
between about 0.3 and 10 T. These
features occur for all three supercon-
ductor systems and are interpreted,
respectively, as a weak- link regime, a
remnant percolation path regime, and a
flux flow regime.

[Contact: Jack W. Ekin, (303) 497-

5448]

Goodrich, L.F., Bray, S.L., and
Stauffer, T.C., Thermal Contraction of
Fiberglass -Epoxy Sample Mandrels and
Its Effect on Critical -Current Measure-
ments, Proceedings of the Sixth Japan-
U.S. Workshop on High Field Supercon-
ductors, Boulder, Colorado, February
22-24, 1989, pp. 91-93.

A systematic study of the effect of
sample -mounting techniques on the super-
conducting critical -current measurement
was made in conjunction with the VAMAS
(Versailles Agreement on Advanced
Materials and Standards) inter laboratory
comparison measurements . A seemingly
small change in mandrel geometry can
result in a 40% change in the measured
critical current of a NbgSn sample at
12 T. This is a result of a change in
the conductor pre-strain at 4 K caused
by variation in thermal contraction
between thick- and thin-walled fiber-
glass-epoxy composite (G-10) tubes. An
approximate measure of the variations
in thermal contraction (from room to
liquid nitrogen temperature) indicates a

0.2% greater contraction for the thick-
walled tube. This difference, combined
with strain sensitivity measurements, is
consistent with the obseirved decrease in
critical current. Previous publications
on the thermal contraction of G-10 have
addressed the plate geometry, but not
the tube geometry. The contraction of a
G-10 plate is highly anisotropic. The
radial contraction of a tube is
different from the contraction of a
plate, however, because the circumferen-
tial fiberglass is put into hoop
compression by the epoxy, and the
resulting contraction is a competition
between the two structural components.
This appears to be the source of the
variation in thermal contraction with
tube wall thickness.

[Contact: Loren F. Goodrich, (303) 497-
3143]

Moreland, J., Ginley, D.S., Venturini,
E.L. , and Morosin, B., Break Junction
Measurement of the Tunneling Gap of a
Thallium-Based High-Temperature

Superconductor Crystal, Applied Physics
Letters, Vol. 55, No. 14, pp. 1463-1465
(2 October 1989).

We have used the break junction method
to measure the tunneling gap of a
thallium-based high- temperature

superconductor crystal in liquid helium
at 4 K. The crystal was predominately
Tl 2 CaBa 2 Cu 2 07 and had a superconducting
onset temperature of 105 K. Tunneling
data showed a symmetric gap about zero
bias between two well-defined conduc-
tance peaks in the conductance versus
voltage curve. The gap is consistent
with a Bardeen-Cooper-Schrieffer energy
gap (A) of 30 meV assuming a supercon-
ductor-insulator-superconductor
electrode configuration. In addition, a
supercurrent could be detected when the
break junction was operated in a point-
contact mode at temperatures as high as
95 K.

[Contact: John Moreland, (303) 497-

3641]

Peterson, R.L. , Bean Model Extended to
Magnetization Jumps, Physics Letters A,

Pape 18

Superconductors ( cont ' d . )

CEEE Technical Publication Announcements - August 1990

Vol. 131, No. 2, pp. 131-134 (8 August
1988) .

The Bean model of magnetization in hard
superconductors is extended to include
the trains of magnetization jumps seen
at low temperature in moderate- to-high
magnetic fields. As in the original
Bean model, no particular mechanisms for
flux pinning or dynamics are invoked.
The model correctly accounts for the
general dependence of the size of the
magnetization jumps on sample size and
critical current density. The data
together with the model show that the
shielding fields are approximately equal
after each jump.

[Contact: Robert L. Peterson, (303)

497-3750/-3227]

Peterson, R.L., Magnetization of
Imperfect Superconducting Grains ,
Physical Review B, Vol. 40, No. 4, pp.
2678-2681 (1 August 1989).

A critical -state theory of the magne-
tization of superconducting grains
containing nonsuperconducting regions
is presented which shows that the
thickness of the sheath of supercurrents
around these regions can be more
important than the grain dimension in
determining the magnetization. This
may explain some apparently conflicting
results on the magnetization of high-
Tg powders of different sizes.

[Contact:

497-3750]

Robert L.

Peterson,

(303)

Peterson,

R.L. ,

and

Ekin , J . W . ,

Airy

Pattern, Weak-Link Modeling of Critical
Currents in Higb-T^ Superconductors ,
Physica C, Vol. 157, (North-Holland,
Amsterdam) pp. 325-333 (1989).

We have measured the transport critical
current density at very low magnetic
fields in samples of superconducting
bulk sintered YjBa 2 Cu 3 0jj, YiBa 2 Cu^ 0 jj,
and HoiBa 2 Cu 3 0jj obtained from several
sources. The results are analyzed at
low fields (< 10 mT) with a statistical

model which assumes that the current is
limited by Josephson weak links (SNS or
SIS Josephson junctions or microbridges)
whose locations are to be determined.
Each weak link is assumed to be
described by an Airy current- field
pattern rather than a Fraunhofer
pattern. The former has a better
theoretical foundation and is in better
agreement with the data, varying as
upon averaging. The fitting
procedure yields the average cross-
sectional area of the weak links. By
assuming the link thickness to be twice
the London penetration depth at 77 K, we
find that the average linear dimensions
of the links are in all cases comparable
to the grain dimensions. The quantita-
tive analysis also confirms the
percolation concept, in which a subset
of weakest links controls the transport
current .

[Contact: Robert L. Peterson, (303)

497-3750 or 3227]

Peterson, R.L. , and Ekin, J.W.,
Josephson-Junction Model of Critical
Current in Granular Y^ Ba 2 Cug Oy _ ^

Superconductors, Physical Review B,
Vol. 37, No. 16, pp. 9848-9851 (1 June
1988) .

We calculate the transport critical-
current density in a granular supercon-
ductor in magnetic fields below about 5
X 10”^ T. The field dependence in this
region is assumed to be controlled by
intragranular or intergranular Josephson
junctions. Various model calculations
are fitted to transport critical-current
data on bulk YiBa 2 Cu 307 _^ ceramic
superconductors , whose average grain
size somewhat exceeds 10 /xm. The
results yield an average junction cross-
sectional area (thickness x length) of 4
to 6 fjim^ . If the junctions are at the
grain boundaries, a London penetration
depth of about 150 to 300 nm is
inferred, consistent with other
estimates. We conclude that Josephson
junctions are limiting the transport
critical current in these samples and
that they lie at the grain boundaries.
The parameters of the fit are not

Page 19

- August 1990

CEEE Technical Publication Announcements

Superconductors (cont'd.)

consistent with Josephson junctions at
twinning boundaries.

[Contact: Robert L. Peterson, (303)

497-3750]

Peterson, R.L. , and Ekin, J.W., Modeling
of Critical Currents in Granular Hig^h-
Tj. Superconductors, Proceedings of
Workshop on Materials Science of High
Tg Superconductors, Gaithersburg,
Maryland, October 11-13, 1988, pp, 190-
195.

The transport critical current density
of several samples of bulk sintered
high-Tg superconductors was measured at
very low magnetic fields and fitted to a
model which assumes that the impediments
to current at such fields are Josephson
weak links. A sample of particular
interest was Yj^Ba 2 Cu 3 0jj made from
hydroxycarbonate precursors; the final
bulk sintered sample was very fine-
grained, having an average grain size of
about 1.8 fim as determined by a linear
intercept analysis. The fit to the
model is excellent if the average
linear dimension of the weak links is
chosen to be 2.0 /xm. We conclude that
this sample, as well as the others, has
Josephson weak links at its grain

boundaries, and that any intragrain

defects which may be responsible for
flux pinning are not the primary weak
links limiting the transport J^ of bulk
samples at very low magnetic fields.
[Contact: Robert L. Peterson, (303)

497-3750]

Roshko, A., Moodera, J.S., and Chiang,
Y-M. , S-N-S Behavior of Grain Boun-
daries in Polycrystalline

Laj ss^^o Physica C, Vol.

162-164, pp. 1625-1626 (1989).

The field and temperature dependence of
transport critical current J^ in well-
characterized, polycrystalline

Lai gjSro isCuO^.y has been inves-
tigated. The behavior at low fields,

close to critical temperature T^ ,
corresponds to that of superconductor-

normal -superconductor (S-N-S) junctions.
[Contact: Alexana Roshko, (303) 497-

5420]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Adams, J.W., Ondrejka, A.R. , .Cavcey,

K.H. , Cruz, J.E., Medley, H.W. , and

Grosvenor, Jr., J.H., Recent Improve-
ments in Time -Domain QIC Measurement
System, NISTIR 89-3927 (November 1989).

Improved techniques for determining
critical resonant frequencies and the
current response of internal wiring due
to external fields for rotary-wing
aircraft are given. The measurement

method uses a train of low-level,

radiated pulses. These do not disturb
other spectrum users, nor do other
spectrum users significantly disturb
these measurements. The fields are low,
a distinct advantage from both cost and
personnel hazard standpoints. The

problems that should be addressed before
the full potential of the technique can
be realized are discussed.

[Contact: John W. Adams, (303) 497-

3328]

Hill, D.A. , and Ehret, R.L. , Near-Field
Gain of Pyramidal Horns from 18 to 40
GHz, NISTIR 89-3924 (November 1989).

Generating a standard electromagnetic
field requires knowledge of the gain of
the transmitting antenna. Using the
two -antenna method, we have measured the
near-field gain of pyramidal horns at
frequencies from 18 to 40 GHz. The
discrepancy between the measured and
theoretical near-field gain is typically
within ±0.3 dB for distances from 0.5
to 4 m from the horn aperture . An
accurate laser alignment of the horns
was necessary to obtain this level of
agreement .

[Contact; David A. Hill, (303) 497-
3472]

Ma, M.T. , and Crawford, M.L. , Facilities
for l 0 q»roving Evaltiations of Electro-

Page 20

Radiated EMI (cont'd.)

CEEE Technical Publication Announcements - August 1990

magnetic Susceptibilities of Weapon

Systems and Electronic Equipment,

NISTIR 89-3928 (November 1989).

A preliminary design of an improved
testing facility for evaluating the
electromagnetic susceptibility of weapon
systems and electronic equipment is
presented. This facility features a
combination of the transverse electroma-
gnetic (TEM) cell for low-frequency
testing and the reverberating chamber
for high-frequency operation. As a
system, a coverage of the wide spectrum
from 10 kHz to 18 GHz or even to 40 GHz
is possible. The TEM/reverberating
combination is designed for an input
impedance to 50, 75, or 100 Q to

generate a continuous -wave electric
field up to 200 V/m, or a pulsed

electric field up to 50 kV/m with an
approximate rise time of 10 ns. The
average field for the reverberating mode
of operation is described in a statisti-
cal sense. Theoretical characteristics
for a case study, to meet a given set of
requirements, are given.

[Contact; Mark T. Ma, (303) 497-3800]

Randa, J.P., and Kanda, M. , Standard
Field Generation for Microwaves and
Millimeter Waves, Navy Metrology,
Research & Development Requirements
Conference Report, Corona, California,
April 4-6, 1989, pp. 97-100 (April

1989) .

The requirements for electromagnetic
field measurements at microwave and
millimeter-wave frequencies in both the
laboratory and the field are discussed.
Current National Institute of Standards
and Technology (NIST) capabilities and
intended extensions are presented. The
NIST anechoic -chamber facility can
generate calibrated fields up to 18 GHz
and will soon be extended to 40 GHz.
Future extensions will be 2-GHz bands
centered at 60 GHz and 95 GHz.
Transfer-standard probes developed by
NIST are available up to 18 GHz, and
work is in progress to develop probes

which would operate to 110 GHz. It is
not clear whether these probes (if
successfully developed) would be
suitable for field use, as hazard
meters, for example. For measurements
in the field, electric-field probes
which are claimed to operate to 40 GHz
are available commercially. Small,
transportable facilities for calibration
of probes in the field are not readily
available. This paper discusses the
present situation in these areas,
presents current NIST work to extend our
relevant capabilities, and notes present
and probable future deficiencies.
[Contact: James P. Randa, (303) 497-

3150]

ADDITIONAL INFORMATION
Lists of Publications

Lyons, R.M. , and Gibson, K.A. , A
Bibliography of the NIST Electromagnetic
Fields Division Publications, NISTIR 89-
3920 (September 1989).

This bibliography lists publications by
the staff of the National Institute of
Standards and Technology's Electromag-
netic Fields Division for the period
from January 1970 through August 1989.
Selected earlier publications from the
Division's predecessor organizations
are included.

[Contact: Kathryn A. Gibson, (303) 497-
3132]

DeWeese, M.E., Metrology for Electromag-
netic Technology: A Bibliography of
NIST Publications, NISTIR 89-3921
(August 1989).

This bibliography lists the publications
of the personnel of the Electromagnetic
Technology Division of NIST in the
period from January 1970 through
publication of this report. A few
earlier references that are directly
related to the present work of the
Division are included.

[Contact: Sarabeth Moynihan, (303) 497-
3678]

CEEE Technical Publication Announcements - August 1990

Page 21

Additional Information (cont'd.)

Palla, J.C., and Meiselman, B. ,
Electrical and Electronic Metrology: A
Bibliography of NIST Electricity
Division's Publications, NIST List of
Publications 94 (January 1990) .

This bibliography covers publications of
the Electricity Division, Center for
Electronics and Electrical Engineering,
NIST, and of its predecessor sections
for the period January 1968 to December
1989. A brief description of the
Division's technical program is given in
the introduction.

[Contact: Jenny C. Palla, (301) 975-

2220 ]

Walters, E.J., Semiconductor Measurement
Technology, NBS List of Publications 72
[a bibliography of NBS publications
concerning semiconductor measurement
technology for the years 1962-1989]
(March 1990) .

This bibliography contains reports of
work performed at the National Institute
of Standards and Technology in the field
of Semiconductor Measurement Technology
in the period from 1962 through December
1989. An index by topic area and a list
of authors are provided.

[Contact: E. Jane Walters, (301) 975-
2050]

NEW CALIBRATION SERVICES OFFERED

The explosive growth of optical fiber
use in the communications industry has
resulted in a demand for calibration
services. NIST's Boulder, Colorado,
laboratory now offers measurements of
optical laser power and energy at
wavelengths and power levels of Interest
to fiber optic producers and users .
Measurements are based on a standard
reference instrument called the C- series
calorimeter. An electrically calibrated
pyroelectric radiometer (ECPR) is
calibrated against the calorimeter and
is then used to calibrate optical power
meters at wavelengths of 850, 1300, and
1550 nm. To improve calibration

capabilities, NIST is preparing test
measurement systems for detector
linearity, detector uniformity, and
detector spectral responsivity . These
systems should be available in 6 months.
For a paper outlining NIST's optical
power measurement capabilities, contact
Fred McGehan, Div. 360, NIST, 325
Broadway, Boulder, Colorado 80303. For
more information on calibration
services, contact Thomas R. Scott, Div.
724, same address, or phone (303) 497-
3651.

NEW NIST RESEARCH MATERIAL

NIST has announced the availability of
Research Material 8458, a well -charac-
terized artificial flaw used as an
artifact standard in eddy current
nondestructive evaluation (NDE) . The
new Research Material (RM) is the
outcome of work carried out by the
Division to address the need for
calibration standards for eddy-current
NDE, for example as used to detect
fatigue cracks in aircraft structures.
The RM flaw is produced in an annealed
aluminum alloy block by first indenting
the block and then compress ively
deforming the resulting notch until it
is tightly closed. The next operation
is to restore a flat finish to the block
face, after which the block is heat
treated to the original temper. The
controlled flaw has been named the "CDF
notch," after its inventors (listed on
patent application) Thomas E. Capobianco
(Electromagnetic Technology Division) ,
William P. Dube (Division 583), and Ken
Fizer (Naval Aviation Depot, NAS
Norfolk, Virginia) .

In the past, the challenge has been to
manufacture artificial flaws that
closely simulate the mechanical
properties of fatigue cracks . Currently
used artifacts include electrical-
discharge -machined and saw-cut notches,
both of which are relatively poor
representations of fatigue cracks as
their widths are too great. The
Division- developed method provides
notches that can be made control lab ly in

Pape 22

CEEE Technical Publication Announcements - August 1990

New NIST Research Material (cont'd.)

a variety of geometries, have known
dimensions, with widths that are narrow
enough to provide an acceptable
representation of fatigue cracks.

An NIST Research Material is not
certified by NIST, but meets the
International Standards Organization
definition of "a material or substance
one or more properties of which are
sufficiently well established to be used
in the calibration of an apparatus, the
assessment of a measurement method, or
for assigning values to materials." The
documentation issued with RM 8458 is a
"Report of Investigation." Contact;
technical information -- Fred Fickett,
(303) 497-3785; order information- -
Office of Standard Reference Materials,
(301) 975-6776.

JAN. 1, 1990 CHANGES IN THE U.S.
ELECTRICAL UNITS

Effective January 1, 1990, the U.S. as-
maintained (i.e., "practical") units of
voltage and resistance were increased by
9.264 ppm and 1.69 ppm, respectively.
The increases in the U.S. legal units of
current and of electrical power will be
about 7.57 ppm and 16.84 ppm, respec-
tively. These changes result from
efforts by the major national standar-
dizing laboratories, including the
National Institute of Standards and
Technology (NIST) , formerly the National
Bureau of Standards (NBS) , to re-
evaluate their as -maintained units in
terms of the International System of
Units (SI). The consequence of this
activity has been the introduction of
standards representing the SI units of
voltage and resistance by the Interna-
tional Committee of Weights and
Measures , an international body created
by the Treaty of the Meter. ^ The use of
these standards world-wide beginning
January 1, 1990, will result in
international consistency of electrical
measurement as well as coherence among
the practical units of length, mass,
electricity, time, etc., inherent in the

definitions of the SI.

Implementation of Changes at NIST

These changes have been instituted in
the U.S. by NIST using the new,
internationally-adopted constants Kj.go
= 483 597.9 GHz/V exactly and R^-go “ 25
812.807 fJ exactly with the Josephson and
quantum Hall effects to establish
representations of the SI volt and ohm,
respectively. The representation of the
SI volt is attained by using Kj.gg in
the formula

Uj(n) = n = 1,2,3, .. .

to give the voltages Uj (n) of the steps
produced by the ac Josephson effect at a
frequency f. The past value, Kj. 72 . was
483 593.42 GHzA(NBS-72) , thus leading
to the 9 . 264 ppm change . Likewise ,
Rk -90 is used in the following formula
for the resistance of the i^^ plateau of
a quantum Hall effect device.

Rad) = (Rk = Red))

to realize a representation of the SI
ohm. The most recent past national unit
of resistance, 0(NBS-48)t , was based on
a group of five Thomas one -ohm standards
and had an uncompensated drift rate of
approximately -0.053 ppm per year.
Since the quantum Hall effect is used as
the national standard, the U.S.
representation of the ohm has no drift.
(The past unit of voltage, V(NBS-72),
was based on the Josephson effect since
1972, and accordingly had a zero drift
rate . )

^Note that the SI Units have not been
redefined; rather, they have been
realized more accurately and a quantum
physics representation of the ohm has
been introduced, thus leading to the
changes in magnitude of the practical or
as-maintained units.

CEEE Technical Publication Announcements - August 1990

Page 23

Changes in U.S. Elec. Units (cont'd.)

Reassigrmients to Non-adiustable

Standards

Since the U.S. practical volt and ohm
units increased on January 1, 1990, the
changes must be implemented in non-
adj us table standards calibrated in terms
of V(NBS-72) and/or n(NBS-48) only by
reducing the values assigned to them
proportionally. The examples given
below show how to do this for a standard
cell and a standard resistor.

Sample Adjustments of Values of

Standards

Standard cell:

"Old" emf 1.0180564 V(NBS-72)

Multiply "Old" emf by 0.999990736 to
get emf in terms of the present volt
representation 1.01804697 -1.0180470 V

Standard resistor:

"Old" resistance value

9999.976 n(NBS-48)oi/oi/90

Multiply "Old" resistance by 0.99999831
to get the resistance in terms of the
present ohm representation

9999.9591 « 9999.959 fi

In the above, "Old" refers to the value
of the standard which would have been in
use on January 1, 1990, had the changes
not been made; i.e., if a correction
curve based on its past assigned values
has been employed to obtain the
currently-used value for a standard, the
above represents a downward shift of the
curve starting January 1, 1990. For

resistance, the slope of the curve also
changed (slightly) since 0(NBS-48) has a
drift rate and n(NIST-90) does not.

Do not send your standards to NIST for
recalibration on January 1, 1990, unless
they are normally due then. The changes
are accurately known and corrections to
existing standards may be applied.

Adjustment of Instrumentation

An assigned or calibrated value of a
standard is merely a label giving the
magnitude of the parameter embodied in
the standard. The actual emf or
resistance of a standard did not change
on January 1, 1990; only what it is
called should have changed. In the same
sense, meter readings are labels giving
the magnitudes of the parameters being
measured. Readings taken after January
1, 1990 vising unadjusted meters will be
too large in magnitude. Adjustments to
meters must have the effect of reducing
the amplitudes of readings for fixed
emf's or resistances.

Adjustable voltage and current sources
or adjustable resistors for which
nominal output is desired, on the other
hand, must have their outputs increased
proportionally by the above amounts.
DVM calibrators are probably the largest
class of this type of instrument.

Guidelines

The National Conference of Standards
Laboratories (NCSL) and NIST have formed
NCSL ad hoc Committee 91.4, Changes in
the Volt and Ohm to assist industry and
government laboratories in coming into
compliance with the changes. A major
responsibility of the committee is the
generation and publication of a set of
guidelines which describes unambiguous
methods for adjusting standards and
instruments, or their values, and
delineates other types of problems which
may arise, e.g., voltage values called
out explicitly in maintenance proce-
dures, values imbedded in software, and
the like. These guidelines have been
published as NIST Technical Note 1263,
"Guidelines for Implementing the New
Representations of the Volt and Ohm
Effective January 1, 1990." This
document is available at no charge
through the NIST Electricity Division.
To receive a copy, contact Sharon Fromm
at 301-975-4222.

For further information, contact Norman

Page 24

CEEE Technical Publication Announcements - August 1990

Changes in U.S. Elec. Units (cont'd.)

B. Belecki (301-975-4223), Ronald F.
Dziuba (301-975-4239), Bruce F. Field
(301-975-4230), or Barry N. Taylor (301-
975-4220) .

U.S. REPRESENTATIONS OF ELECTRICAL POWER
AND ENERGY

Watt, Var, Volt-Ampere
Joule, Watthour, Varhour
Volt-Ampere-hour, and Q-hour

Background

By international agreement, starting on
January 1, 1990, the U.S. put into place
new representations of the volt and ohm
based, respectively, on the Josephson
and Quantum Hall effects and which are
consistent with the International
Systems of Units (SI). Implementation
of the new volt and ohm representations
in the U.S. required that on January 1,
1990, the value of the present national
volt representation maintained by the
National Institute of Standards and
Technology (NIST, formerly the National
Bureau of Standards) be increased by
9.264 parts per million (ppm) and that
the value of the national ohm represen-
tation be increased by 1.69 ppm (1 ppm =
0.0001%). The resulting increase in the
national representation of the ampere is
7.57 ppm. The resulting increase in the
national representations of the
electrical quantities of power, namely
the watt, var, and volt-ampere, and the
quantities of energy, namely the joule,
watthour, varhour, volt-ampere-hour, and
Q-hour is 16.84 ppm.

The adjustment for electrical power and
energy is generally very small compared
to revenue metering measurement
uncertainties (typically greater than
±0.1%) and therefore are not likely to
have a significant effect. Adjustments
do not need to be applied in these
instances. However, for the highest
accuracy calibrations of power and
energy standards having uncertainties
less than ±0.020% (±200 ppm), adjust-

ments should be made. Accordingly, all
Reports of Calibration and Reports of
Test issued by NIST after January 1 ,
1990, reflect the appropriate changes.

For instruments calibrated prior to
January 1, 1990, adjustments to the

calibration values due to the change in
the volt and ohm can be made without
instrument recalibration. The adjust-
ments are exact and, if properly
applied, will not introduce any errors.
Examples given below illustrate proper
procedures for applying the new
adjustments .

Adjustments for Wattmeters. Varmeters.

and Volt-Ampere Meters

Calibrations of wattmeters, varmeters,
and volt-ampere meters at NIST provide
customers with corrections and uncer-
tainties given in units of watts , vars ,
or volt-amperes, as appropriate.
Applying the appropriate adjustment due
to the new representations of the volt
and ohm for power measuring instruments
(i.e., wattmeters for "real power" and
varmeters for quadrature or imaginary
power) requires minor calculations.
First, it is necessary to assess the
magnitude of the calibration uncertainty
in percent and then decide if applying
the adjustments for the change in the
volt and ohm are required. To determine
the percentage uncertainty, divide the
uncertainty in watts, vars, or volt-
amperes by the product of the applied
voltage and current times the power
factor (the real power) and multiply
that quantity by 100, as

U% = [(U^, Uv. or U^.)/

(V. X I, X PF)] X 100,

where

is the

uncertainty

in percent.

is the
watts ,

calibration

uncertainty

is the
vars ,

calibration

uncertainty

Uv.

is the calibration
volt-amperes ,

uncertainty

CEEE Technical Publication Announcements - August 1990

Page 25

Electrical Power & Energy (cont'd.)

is the applied voltage in volts,

Ig is the applied current in amperes,
and

PF is the power factor (including its
sign) .

For example, if the uncertainty is
stated on a Report of Calibration as
±0.060 watts for the calibration of a
wattmeter at an applied voltage of 120 V
and an applied current of 5 A at unity
power factor, then

Percent Uncertainty = U% = [(±0.060 W)/
(120 V X 5 A X 1)] X 100
= ± 0 . 010 %.

If the percentage uncertainty, as
calculated above, is less than ±0.020"
(as it is in the above example) , then it
is recommended that an adjustment due
to the new representations of the volt
and ohm of 0.0017% (0.001684% rounded

to four significant decimal places) be
applied.

The second step is the calculation of
how large the adjustment will be (in
units of watts, vars, or volt-amperes,
as appropriate) , due to the reassignment
of the volt and ohm. For the same
example given above, if the calibration
correction was given in a Report of
Calibration as +0.052 watts, then the
adjustment due to the change in the volt
and ohm may be calculated by multiplying
the product of the applied voltage and
current times the power factor by
0.000017 (0.0017% expressed in propor-
tional parts) , as

Adjustment = (V^ x x PF) x 0.000017
Adjustment = (120 VxSAxl )x
0.000017 = 0.010 watts.

The resulting product should be rounded
to the same number of significant
decimal places as the old calibration
correction was given. This result is
then subtracted from the old calibration
correction, as in the following example:

Old Calibration Correction

(prior to 1/1/90) = {+0.052 watts)

less 0.000017 x Applied

Volt-amperes x PF = -{+0.010 watts)

New Calibration Correction

(after 1/1/90) = {+0.042 watts)

If the old calibration correction (prior
to 1/1/90) at test conditions of 120 V,
5 A, and at a power factor of 0.5 lag,
happened to be a negative quantity, for
example, -0.031 watts, then the old
calibrations correction would be
decreased (made more negative) by
0.0017% of the applied volt-ampere
product times the power factor, as in
the following example:

Old Calibration Correction

(prior to 1/1/90) = {-0.031 watts)

less 0.000017 x Applied

Volt-amperes x PF = -{+0.005 watts)

New Calibration Correction

(after 1/1/90) = {-0.036 watts)

The process of making the corresponding
change for the varmeter corrections is
identical to that shown above . For
volt-ampere meters, the adjustment is
made independent of the power factor
(i.e., a value of PF = 1 may be used).
However, most varmeter and volt-ampere
meter calibrations have stated uncer-
tainties greater than ±0 . 020% , and hence
would not require an adjustment.

Adjustments for Joule. Watt-. Var- ,

Volt- Ampere- and 0-Hour Meters

Applying adjustments to electric energy
measuring instruments (i.e., joule,
watthour, varhour, volt-ampere-hour, and
Q-hour meters) for changes in the
representation of the volt and ohm, is
more straightforward because the common
calibration constant for energy metering
is expressed as a "percentage registra-
tion." The amount the registration is
to be adjusted can be subtracted
directly as a percentage, regardless of
power factor.

For example, if a watthour meter has a
registration of 100.015% before January

Page 26 CEEE Technical Publication Announcements - August 1990

Electrical Power & Energy (cont'd.) Nelson (310) 975-2427, or write:

1, 1990, then after that date, the new
assigned registration would be decreased
by 0.0017% (rounded from 0.001684%) as

Old percentage registration
(prior to 1/1/90) =

less amount due to change
in volt and ohm =

New percentage registration
(after 1/1/90) =

Rounded to three significant
decimal places =

100.015%

-0.0017%

100.0133%

100.013%

The process of making the corresponding
changes for the joule, varhour, volt-
ampere-hour and Q-hour meters are
identical to that shown above. If the
associated uncertainty of the calibra-
tion is greater than ±0.020%, no
adjustments are necessary, as stated in
the instances for wattmeters, varmeters,
and volt-ampere meters. The uncer-
tainties for varhour, volt-ampere-
hour, and Q-hour meters are seldom less
than ±0.020%, and hence adjustments
generally do not need to be made.

National Institute of Standards and
Technology

Electricity Division, MET B344
Gaithersburg, MD 20899

NEW BROCHURE FOR SEMICONDUCTOR SRMs

Standard Reference Materials for
Semiconductor Manufacturing Technology
lists a series of SEUls for use in
characterizing semiconductor materials
and processes. The SRMs include a
series of silicon resistivity materials
for calibrating four-probe and eddy-
current test equipment, sizing materials
for calibrating optical and scanning
electron microscopes, SRMs for mechani-
cal testing, optical measurements. X-ray
and photographic films. X-ray diffrac-
tion, and the chemical analysis of
materials .

[Contact: Roger Rensberger, (301) 975-

2762]

1990 CEEE CALENDAR

August 28-31 (Vail and Boulder, CO)

Reference

N.B. Belecki, R.F. Dziuba, B.F. Field,
and B.N. Taylor, Guidelines for
Implementing the New Representations of
the Volt and Ohn Effective January 1 ,
1990, NIST Technical Note 1263, June,
1989.

Copies of the above document are
available at no cost from:

National Institute of Standards and
Technology

Electricity Division, MET B146
Gaithersburg, MD 20899
Telephone: (301) 975-4222

For Further Information

For further information concerning the
above information, contact either John
D. Ramboz (301) 975-2434 or Thomas L.

Laser Measurements Short Course . In
cooperation with the University of
Colorado and industry, NIST is offering
a three -and- one -half day course
emphasizing the concepts, techniques,
and apparatus used in measuring laser
parameters. Topics in the course
syllabus include optics for laser
measurements , attenuation techniques ,
laser operation, basic laser power/ener-
gy standards, laser power/energy
measurement techniques , optical fiber
power measurements , pulse measurements ,
transfer standards, beam-profile
measurements, diode lasers, laser
measurements for optical communications,
statistics and error analysis, laser
safety, and detectors. The course will
incorporate a visit to the NIST laser
measurement laboratories .

[Contact: Thomas Scott, (303) 497-3651
or Office of Conference Services,
University of Colorado at Boulder, (303)
492-5151]

CEEE Technical Publication Announcements - August 1990

Pape 27

1990 CEEE Calendar (cont'd,)

September 11-12, 1990 (Boulder, CO)

Symposium on Optical Fiber Measurements.
NIST, in cooperation with the Institute
of Electrical and Electronics Engineers
Optical Communications Committee and the
Optical Society of America, will sponsor
the 6th Biennial Symposium on Optical
Fiber Measurements. The symposium will
be devoted entirely to measurements on
fiber, related components, and systems.
Typical topics will include telecom-
munications fibers, fiber lasers and
amplifiers, fibers for sensors,
couplers, connectors, multiplexers,
integrated optics, sources, detectors,
modulators, switches, long haul systems,
LANs, subscriber loops, field and
laboratory instrumentation, and

standards. Experimental and analytical
papers are solicited on any aspect of
measurements for guided- lightwave
technology.

[Contact: Douglas L. Franzen, (303)

497-3346.

September 17-19, 1990 (Boston, MA)

VLSI and GaAs Chip Packaging Workshop.
The IEEE CHMT Society and the National
Institute of Standards and Technology
are co-sponsoring the Ninth VLSI
packaging Workshop. Topics to be
discussed include VLSI package design;
multichip module design; WSI packaging;
package thermal design; package
electrical design; GaAs IC packaging;
VLSI package interconnection options;
VLSI package materials and die-attach
solutions; and failure mechanism and
quality of VLSI packages. All attendees
are expected to be specialists working
in the field and to participate in
discussions .

[Contact: George G. Harman, (301) 975-

2097]

October 24-26 (Boulder, CO)

Symposium on Optical Materials for High
Power Teasers (Boulder Damage Symposium) .
The Symposium is the principal forum for

the exchange of information on the
physics and technology of materials for
high-power lasers. Co-sponsors in
addition to NIST are ASTM -- Standards
for Materials, Products, Systems &
Services; the Center for Research in
Electro-Optics and Lasers at the
University of Central Florida; the
Defense Advanced Research Projects
Agency; Lawrence Livermore National
Laboratory, Los Alamos National
Laboratory; SPIE -- the International
Society for Optical Engineering; and the
Weapons Laboratory of the U.S. Air
Force. Topics on the agenda include new
materials, bulk damage phenomena,
surface and thin- film damage, prepara-
tion of optical material, measurement of
optical material properties, design
consideration for high-power systems,
and fundamental mechanisms of laser-
induced damage .

[Contact: Aaron A. Sanders, (303) 497-
5341]

CEEE SPONSORS

National Institute of Standards and
Technology
U.S. Air Force

Hanscom Field; Rome Air Development
Center; Space & Missile Organization;
U.S. Air Force Headquarters; Wright-
Patterson Air Force Base
U.S. Army

Fort Belvoir; Fort Monmouth; Fort
Huachuca; Materials & Mechanics
Research Center; Strategic Defense
Command; Dugway Proving Ground;
Strategic Defense Initiative Organiza-
tion; AVRADCOM (Aviation)

Department of Defense
Advanced Research Projects Agency;
Defense Communication Agency; Defense
Nuclear Agency; Combined Army /Navy /Air
Force (CCG)

Department of Energy
Energy Systems Research; Fusion Energy;
Basic Energy Sciences; High Energy &
Nuclear Physics
Department of Justice
Law Enforcement Assistance Administra-
tion

Page 28

CEEE Sponsors (cont'd.)

CEEE Technical Publication Announcements - August 1990

U . S . Navy

Naval Ocean Systems Center; Naval Sea
Systems Command; Weapons Support
Center/Crane; Office of Naval Research;
Naval Ship Research Development Center;
Naval Air Systems Command; Aviation
Logistics Center/Patuxent
National Science Foundation

National Aeronautics and Space Admin
istration

Goddard Space Flight Center; Lewis
Research Center
Nuclear Regulatory Commission
Department of Transportation
National Highway Traffic Safety
Administration
MIMIC Consortium

Various Federal Government Agencies

NIST-1 14A U.S. DEPARTMENT OF COMMERCE

(REV. 3-90) NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

BIBLIOGRAPHIC DATA SHEET

1 . PUBUCATION OR REPORT NUMBER

NISTIR 4383

2. PERFORMING ORGANIZATION REPORT NUMBER

3. PUBUCATION DATE

Aucmst J.99(D

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, October to December 1989, with 1990 CEEE Events Calendar

5. AUTHOR(S)

J. A. Gonzalez, compiler

6. PERFORMING ORGANIZATION (IF JOINT OR OTHER THAN NIST, SEE INSTRUCTIONS)

U.S. DEPARTMENT OF COMMERCE

NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

GAITHERSBURG, MD 20898

7. CONTRACT/ORANT NUMBER

8. TYPE OF REPORT AND PERIOD COVERED

October-December 1989

SPONSORINQORQANIZATtON NAME AND COMPLETE ADDRESS (STREET, CITY. STATE, ZIP)

U.S. Department of Commerce

National Institute of Standards and Technology
National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

11. ABSTRACT (A 200-WORO OR LESS FACTUAL SUMMARY OF MOST SIQNIHCANT INFORMATION. IF DOCUMENT INCLUDES A SIGNIFICANT BIBUOORAPHY OR
LITERATURE SURVEY, MENTION IT HERE.)

This is the twenty- third issue of a quarterly publication providing information on
the technical work of the National Institute of Standards and Technology (formerly the
National Bureau of Standards) Center for Electronics and Electrical Engineering. This
issue of the Center for Electronics and Electrical Engineering Technical Publication
Announcements covers the fourth quarter of calendar year 1989. Abstracts are provided
by technical area for papers published this quarter.

12. KEY WORDS (6 TO 12 ENTRIESlALEHABETICAL QRDER; Ci^AUZp ONLY PROPER NAMB; AND SEPARATE 1^ WORDS BY SEMICOLONS)

antennas; electrical engineering; electrical power; electromagnetic interference;
electronics; instrumentation; laser; magnetics; microwave; optical fibers;
semiconductors ; superconductors

13. AVAILABILITY

UNUMITED

FOR OFFICIAL DISTRIBUTION. DO NOT RELEASE TO NATIONAL TECHNICAL MFORMATION SERVICE (NTIS).

ORDER FROM SUPERINTENDENT OF DOCUMENTS, UE. OOVERNMENT PRINTINa OFFICE,
WASHINQTON, DC 20402.

ORDER FROM NATIONAL TECHNICAL INFORMATION SERVICE (NTIS), SPRINQFIELO.VA 22161.

14. NUMBER OF PRINTED PAGES

IS. PRICE

A03

ELECTRONIC FORM

U.S. DEPARTMENT OF COMMERCE
NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
GAITHERSBURG. MD 20899
RETURN POSTAGE GUARANTEED

OFFICIAL BUSINESS
PENALTY FOR PRIVATE USE. $300

BULK RATE

POSTAGE & FEES PAID

NIST

PERMIT No G195

MST/CEEE/MAYM

KEY CONTACTS
Canter Haadquartors (720)

Elactroinagnatic FMds Division (723)
Elactromaonatic Tachnology Division (724)
Samlconductor Elactronics Division (727)
Eiactricity Division (728)

Dlractor, Mr. Judson C. French (301) 975-2220
Deputy Director, Mr. Robert L Scaca (301) 975-2220
Chief, Dr. Ramon C. Baird (303) 497-3131
Chief, Dr. Robert A. Kemper (303) 497-3535
Chief, Mr. Frank F. Oettinger (301) 975-2054
Chief, Dr. Oskars Petersons (301) 975-2400

INFORMATIOW:

For additional information on the Center for Electronics and Electrical Enoineering, write or call:
Canter for Electronics and Electrical Engineering
National lirstitute of Standards and Technology
Metrology BuDdIng, Room B-3S8
Gaithersburg, MD 20899
Telephone (301) 975-2220

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